J. Phys. Chem. B 109 (2005) 6343-6354.
 
Inner-Shell Excitation Spectroscopy and X-ray Photoemission Electron Microscopy of Adhesion Promoters
 

David Tulumello, Glyn Cooper, Ivo Koprinarov, and Adam P. Hitchcock
Department of Chemistry, McMaster UniVersity, Hamilton, Ontario L8S 4M1, Canada

Edward G. Rightor, Gary E. Mitchell, Steve Rozeveld, Greg F. Meyers, and Ted M. Stokich
The Dow Chemical Company, 1897 Building, Midland, Michigan 48667, and Advanced Electronic Materials, The Dow Chemical Company, 1712 Building, Midland, Michigan 48674

Received: January 11, 2005 

The C 1s, Si 2p, Si 2s, and O 1s inner-shell excitation spectra of vinyltriethoxysilane, trimethylethoxysilane, and vinyltriacetoxysilane have been recorded by electron energy loss spectroscopy under scattering conditions dominated by electric dipole transitions. The spectra are converted to absolute optical oscillator strength scales and interpreted with the aid of ab initio calculations of the inner-shell excitation spectra of model compounds. Electron energy loss spectra recorded in a transmission electron microscope on partly cured adhesion promoter, atomic force micrographs, and images and X-ray absorption spectra from X-ray photoemission electron microscopy of as-spun and cured vinyltriacetoxysilane-based adhesion promoter films on silicon are presented. The use of these measurements in assisting chemistry studies of adhesion promoters for electronics applications is discussed.

10.1021/jp050201v CCC: 2005 American Chemical Society